Super Low Gate Charge
Green Device Available
Excellent Cdv/dt effect decline
Advanced high cell density Trench
technology
Product Summary
BVDSS
RDSON
ID
100V
18 mΩ
50A
Descrtption
TO252 Pin Configuration
The AP50N10 is the highest performance trench N-
ch MOSFETs with extreme high cell density,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The AP50N10 meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved.
