VS320N10AU100V\/320AN通道(MOSFET威兆一級代理)

VS320N10AU 100V/320A N-Channel Advanced Power MOSFET ---VS320N10AU

VS320N10AU? VSP008N10MSC? ?VS1401AMH? VS3506AE? VS3610AI VS840ATH VS8401AMT等威兆一級代理 可售樣 可提供技術支持歡迎來電咨詢? ?量大價優? ?13418531057(胡藍丹)??

VS320N10AU?替換IXFH320N10T2? 威兆正規代理商 可售樣

Features ? Enhancement mode ? Very Low on-resistance RDS(on) ? Fast Switching and High efficiency ? 100 Avalanche test

VS320N10AU TO-247 320N10A 30pcs/Tube

Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj=25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 100 -- -- V IDSS Zero Gate Voltage Drain Current VDS=100V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tj =125℃) VDS=100V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±25V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 2.6 3.1 3.6 V RDS(on) Drain-Source On-State Resistance ④ VGS=10V, ID=120A -- 2.6 3.1 mΩ Tj =100℃ -- 3.9 -- mΩ Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Ciss Input Capacitance VDS=30V,VGS=0V, f=1MHz

23480 31305 41635 pF Coss Output Capacitance 1000 1335 1775 pF Crss Reverse Transfer Capacitance 325 430 570 pF Rg Gate Resistance f=1MHz 0.2 0.7 5 Ω Qg Total Gate Charge VDS=50V,ID=80A, VGS=10V -- 452 600 nC Qgs Gate-Source Charge -- 131 174 nC Qgd Gate-Drain Charge -- 119 179 nC Switching Characteristics Td(on) Turn-on Delay Time VDD=50V, ID=80A, RG=3Ω, VGS=10V -- 77 -- ns Tr Turn-on Rise Time -- 142 -- ns Td(off) Turn-Off Delay Time -- 190 -- ns Tf Turn-Off Fall Time -- 137 -- ns Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated) VSD Forward on voltage ISD=120A,VGS=0V -- 0.9 1.2 V Trr Reverse Recovery Time Tj=25℃,Isd=80A, VGS=0V

di/dt=100A/μs -- 63 -- ns Qrr Reverse Recovery Charge -- 144 -- nC NOTE: ① Repetitive rating; pulse width limited by max junction temperature. ② Limited by TJmax, starting TJ = 25°C, L =0.5mH, RG = 25Ω, IAS =50A, VGS =10V. Part not recommended for use above this value ③ The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. ④ Pulse width ≤ 380μs; duty cycle≤ 2

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